Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Patent
1996-11-26
1998-09-22
Anderson, Bruce
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
250397, H01J 3730
Patent
active
058118233
ABSTRACT:
A high throughput ion implantation system that rapidly and efficiently processes large quantities of flat panel displays. The ion implantation system has an ion source, an electrode assembly, a platform mounting a workpiece, and a ion beam measuring structure. The ion source in conjunction with the electrode assembly forms an ion beam in the shape of a ribbon beam. The ion beam is formed and directed such that a first portion of the ion beam treats the workpiece while a second portion of the ion beam is contemporaneously measured by the beam measuring structure. A controller obtains data from the beam measuring structure on the ion beam's parameters, and then generates control signals to the ion implantation system in response to the data.
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"A High Resolution Beam Profile Measuring System for High-Current Ion Implanters", Nuclear Instrucments & Methods in Physics Researc, Section-B: Beam Interactions with Materials and Atoms, vol. B55, No. 1/04, 2 Apr. 1991.
Blake Julian G.
Brailove Adam A.
Rose Peter H.
Sferlazzo Piero
Anderson Bruce
Eaton Corporation
Engellenner Thomas J.
Laurentano Anthony A.
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