Control gate lateral silicon-on-insulator bipolar transistor

Details Control gate lateral silicon-on-insulator bipolar transistor Control gate lateral silicon-on-insulator bipolar transistor

1987-11-13

1990-05-01

Mintel, William

357 59, 357 231, 357 237, H01L 2972

Patent

active

049223151

ABSTRACT:
The present invention relates to silicon-on-insulator (SOI) gated lateral bipolar transistors that are CMOS compatible. A method is described wherein a heavily doped region is implanted into the base after gate formation to provide a low resistance path to the base contact. A lightly doped region is also provided underneath the gate to minimize base-collector capacitance.

REFERENCES:
Sturm et al., "A Lateral Silicon-On-Insulator Bipolar Transistor with a Self-Aligned Base Contact", IEEE Electron Device Letters, vol. EDL-8, No. 3, Mar. '87, 194-6.
Tsaur et al., "Fully Isolated Lateral Bipolar-MOS Transistors Fabricated in Zone-Melting-Recrystallized Si Films on SiO.sub.2 ", IEEE Electron Device Letters, vol. EDL-4, No. 8, Aug. '83, 269-71.
Rodder et al., "Silicon-On-Insulator Bipolar Transistors", IEEE Electron Device Letters, vol. EDL-4, No. 6, Jun. 1983, 193-195.
Colinge, "An SOI Voltage-Controlled Bipolar-MOS Device", IEEE Transactions on Electron Devices, vol. ED-34, No. 4, Apr. 1987, 845-849.
"SOI: Electrical Characterization", by D. P. Vu, Jun. 1986, pp. 369-378.
S. M. Sze, "Physics of Semiconductor Devices", A Wiley-Interscience Publication, (1981).
M. W. Geis et al., "Use of Zone-Melting Recrystallization to Fabricate a Three-Dimensional Structure Incorporating Power Bipolar and Field-Effect Transistors", IEEE Electron Device Letters, vol. EDL-7, No. 1 (Jan. 1986).
J. P. Colinge, "Half-Micrometer-Base Lateral Bipolar Transistors Made in Thin Silicon-On-Insulator Films", (Jun. 1986).

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