Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons
Patent
1989-09-08
1992-04-21
Miller, Stanley D.
Electrical transmission or interconnection systems
Nonlinear reactor systems
Parametrons
307253, 333262, H03K 17687
Patent
active
051071525
ABSTRACT:
A gate biasing circuit including a Schottky barrier diode in series with an ion implanted resistor for use with a baseband MMIC control components such as an MESFET. The diode gate biasing scheme improves the low frequency distortion characteristics of GaAs MESFET control components significantly, allowing microwave power handling and distortion characteristics to be maintained below 100 Hz.
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Fryklund David
Gutmann Ronald J.
Jain Nitin
MIA-COM, Inc.
Miller Stanley D.
Tran Toan
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