Control circuitry using a pull-down transistor for high voltage

Details Control circuitry using a pull-down transistor for high voltage Control circuitry using a pull-down transistor for high voltage

1980-02-11

1982-09-14

Clawson, Jr., Joseph E.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307252C, 307318, 307566, 307305, 331108R, 331115, 357 22, 357 38, 357 58, H03K 1760

Patent

active

043497519

ABSTRACT:
To switch a first gated diode switch (GDS1) to the "OFF" state requires a voltage applied to the gate which is more positive than that of the anode or cathode and a sourcing of current into the gate of substantially the same order of magnitude as flows between the anode and cathode of the first switch. Control circuitry, which uses a second gated diode switch (GDSC) coupled by the cathode to the gate of the first switch (GDS1), is used to control the state of the first switch (GDS1). The control circuitry comprises a first branch circuit coupled to the gate of GDSC and to a first potential source +V1 and a second branch circuit coupled to the anode of GDSC and to a second potential source V2. The first branch circuit is connected to the gate of the second switch (GDSC) and controls the state thereof. The second branch circuit helps switch the first switch to the OFF state by providing a single current pulse or a plurality of current pulses into the gate of the first switch.

REFERENCES:
patent: 3474352 (1969-10-01), Merrell
patent: 3676877 (1972-07-01), Kobayashi
patent: 4117351 (1978-09-01), Kalfus et al.
patent: 4250409 (1981-02-01), Davis et al.

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