Control circuitry using a pull-down transistor for high voltage

Details Control circuitry using a pull-down transistor for high voltage Control circuitry using a pull-down transistor for high voltage

1979-12-28

1981-02-10

Clawson, Jr., Joseph E.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307252C, 307252J, 307252K, 307305, 357 22, 357 38, 357 58, H03K 1751, H03K 1774

Patent

active

042504090

ABSTRACT:
To switch a first gated diode switch (GDS) to the "OFF" state requires a voltage applied to the gate which is more positive than that of the anode or cathode and the sourcing of current into the gate which is of the same order of magnitude as flows between the anode and cathode. Control circuitry, which uses a second GDS coupled by the cathode to the gate of the first GDS, is used to control the state of the first GDS. The state of the second GDS is controlled by a branch circuit having a relatively modest current handling capability. An n-p-n junction transistor has the emitter and collector coupled to the cathode and gate, respectively, of the first GDS, and has the base coupled through a p-n-p transistor to the input terminal of the control circuitry. The n-p-n transistor facilitates a quick turn-on of the first GDS by rapidly bringing the potentials of the gate and cathode of the first GDS to levels which are close together.

REFERENCES:
patent: 3737721 (1973-06-01), Ogawa
D. Houston et al., "A Field Terminated Diode," IEEE Trans. on Elec. Dev., vol. ED-23#8, Aug. 1976, pp. 905-911.

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