Control circuitry for high voltage solid-state switches

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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Details

307252A, 307305, 357 38, H03K 1712, H03K 1772

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active

044477449

ABSTRACT:
Control circuitry used with the combination of a control switch (typically a gated diode switch GDS) which is coupled to a control (gate) terminal of a like load switch which consists essentially of first and second p-n-p transistors. The collector of the first p-n-p transistor is coupled to an anode of the control switch. The emitter of the first p-n-p transistor is coupled to the base of the second p-n-p transistor and to a control circuitry input terminal. The collector of the second p-n-p transistor is coupled to a gate terminal of the control switch. The control circuitry limits undesirable current flow into the load switch and has fewer components than commonly used control circuitry which performs a like function.

REFERENCES:
patent: 4345163 (1982-08-01), Davis et al.
patent: 4349751 (1982-09-01), Hartman et al.

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