Control circuit for semiconductor device

Details Control circuit for semiconductor device Control circuit for semiconductor device

1995-06-28

1997-04-29

Wambach, Margaret Rose

Miscellaneous active electrical nonlinear devices, circuits, and

Gating

Utilizing three or more electrode solid-state device

327109, 327267, 327287, H03K 17615

Patent

active

056253125

ABSTRACT:
A control circuit for an insulated-gate semiconductor device (IGBT) 1 has a drive circuit 2, which is a series circuit constructed of an npn transistor 3 and a pnp transistor 4, and controls the switching operation of the IGBT 1 in response to an on/off signal 9S from a switching signal source 9. The control circuit includes a switching speed control means 10, a gate potential stabilizing npn transistor 20, and a stable operation extending means 30. The switching speed control means 10 gives predetermined slops to the rise and fall of the on/off signal 9S. The gate potential stabilizing npn transistor 20 is Darlington-connected to the pnp transistor 4 of the drive circuit 2 and has the emitter thereof connected to the source of the IGBT 1. The stable operation extending means 30 generates an on signal to the base of the gate potential stabilizing npn transistor 20 upon sensing a drop in the gate potential of the IGBT 1 to a threshold voltage thereof or less.

REFERENCES:
patent: 4618782 (1986-10-01), Lang et al.

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