Control and modification of dopant distribution and activation i

Details Control and modification of dopant distribution and activation i Control and modification of dopant distribution and activation i

1994-05-26

1995-11-21

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Non-single crystal, or recrystallized, material forms active...

257 52, 257 64, 257 65, 257607, 257611, 257905, 437 27, 437 46, 437152, 437933, 437934, 437975, H01L 2904, H01L 21265

Patent

active

054689740

ABSTRACT:
Dopant distribution and activation in polysilicon is controlled by implanting electrically neutral atomic species which accumulate along polysilicon grain boundaries. Exemplary atomic species include noble gases and Group IV elements other than silicon.

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