Contrast enhanced photolithography

Details Contrast enhanced photolithography Contrast enhanced photolithography

2006-04-04

2006-04-04

Chu, John S. (Department: 1752)

Radiation imagery chemistry: process, composition, or product th

Diazo reproduction, process, composition, or product

Composition or product which contains radiation sensitive...

C430S157000, C430S162000, C430S273100, C430S326000, C430S512000

Reexamination Certificate

active

07022452

ABSTRACT:
Contrast enhanced photolithography methods and devices formed by the same are described. In accordance with these methods, a photoresist layer is formed on a substrate. A contrast enhancing system including a solution or dispersion of a photobleachable dye is formed on the photoresist layer. The photoresist layer is exposed through an imaging pattern and through the contrast enhancing system to radiation having a wavelength between about 230 nm and about 300 nm. The contrast enhancing layer is removed, and the photoresist layer is developed to form a photoresist pattern on the substrate. The contrast enhancing system may be removed and the photoresist layer may be developed in a single process step or in different process steps.

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