Contractless mode of electroreflectance

Details Contractless mode of electroreflectance Contractless mode of electroreflectance

1992-03-31

1994-02-15

Rosenberger, Richard A.

Optics: measuring and testing

Of light reflection

356432, 250226, G01N 2155

Patent

active

052871690

ABSTRACT:
A method and apparatus for a contactless mode of electroreflectance (ER) which utilizes a condenser-like system, of which the front electrode is light transparent, i.e., for instance, consists of a transparent conductive coating on a transparent substrate which is separated from the sample surface by a thin layer of air. With the use of the method and apparatus of this invention, the contactless electroreflectance spectra could be measured at 300K from a number of materials including semi-insulating bulk GaAs, bulk Si, bulk Hg.sub.0.75 Cd.sub.0.25 Te, a GaAs structure with large uniform electric field and a GaAs/GaAlAs coupled double quantum well.

REFERENCES:
patent: 4440617 (1984-04-01), Solomon
patent: 4730109 (1988-03-01), Afromowitz
Gal et al., "Novel Contactless Electroreflectance Spectroscopy of Semiconductors," Appl. Phys. Lett vol. 56 #6, Feb. 5, 1990 pp. 545-547.
Ginly et al., "Photoelectrochemistry and Electrosynthesis as Semiconductor Materials" Proceedings, vol. 88-14, pp. 468-476.

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