Contoured inner after-heater shield for reducing stress in growi

Details Contoured inner after-heater shield for reducing stress in growi Contoured inner after-heater shield for reducing stress in growi

1994-11-04

1996-09-24

Garrett, Felisa C.

Single-crystal, oriented-crystal, and epitaxy growth processes;

Apparatus

For crystallization from liquid or supercritical state

117 23, 117200, C30B 3500

Patent

active

055587127

ABSTRACT:
An apparatus for growing hollow crystalline bodies by the EFG process, comprising an EFG die having a top surface shaped for growing a hollow crystalline body having a cross-sectional configuration in the shape of a polygon having n faces, and a radiation shield adjacent to and surrounded by the top end surface of the die, characterized in that the shield has an inner edge defining a similar polygon with n sides, and the inner edge of the shield is notched so that the spacing between the n faces and the n sides is greatest between the central portions of the n faces and the n sides, whereby the greater spacing at the central portions helps to reduce lateral temperature gradients in the crystalline body that is grown by use of the die.

REFERENCES:
patent: 4440728 (1984-04-01), Stormont et al.
patent: 5037622 (1991-08-01), Harvey et al.
patent: 5106768 (1992-04-01), Bathey et al.
patent: 5156978 (1992-10-01), Bathey et al.

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