Continuously fed single bubbler for epitaxial deposition of sili

Details Continuously fed single bubbler for epitaxial deposition of sili Continuously fed single bubbler for epitaxial deposition of sili

1998-03-27

2000-09-26

Utech, Benjamin L.

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

117 86, 117202, 118726, 137386, 141 83, 141198, 222 58, 261126, C30B 2300, B65B 130

Patent

active

061237655

ABSTRACT:
A delivery system and method for providing a gaseous chemical is provided. The system comprises a single bubbler 12 having a chamber 13 for containing a liquid chemical, at least one inlet tube 14 for providing a carrier gas to said chamber, and one outlet tube 16 for providing the gaseous chemical. A liquid chemical supply line 25 conveys the liquid chemical to said chamber. A bubbler is in contact with weight measuring device 24 for weighing the bubbler and generating an output signal responsive to the measured weight. A liquid chemical controller 20 is operatively coupled to said bubbler and said supply line for filling and continuously maintaining a preselected level of the liquid chemical in said chamber responsive to said output signal.

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patent: 5402834 (1995-04-01), Levin et al.
patent: 5669250 (1997-09-01), Dausch et al.
patent: 5878793 (1999-03-01), Siegele et al.

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