Chemistry: electrical and wave energy – Apparatus – Coating – forming or etching by sputtering
Patent
1997-03-13
1999-09-14
Nguyen, Nam
Chemistry: electrical and wave energy
Apparatus
Coating, forming or etching by sputtering
20429825, 118718, 118719, C23C 1456
Patent
active
059518359
ABSTRACT:
More than two pressure reducing chambers 6 to 9 are located on both the upstream and the downstream of vacuum processing housings 11 and 12. Each of the pressure reducing chambers 6 to 9 includes a film conveying means 30, a vacuum exhausting means, and a gate valve 20 provided with a resilient member for closely holding down the running film 1 to seal off the vacuum state of a belt-like passage of the gate valve 20. As the pressure reducing chambers 6 to 9 are protected with their specific gate valve belt-like passage arrangement from reduction of the vacuum state and located respectively on the upstream and downstream sides of the vacuum processing units 11 and 12, the vacuum state in the continuous vacuum processing apparatus will be maintained to a desired level. While the running film 1 is being conveyed, the gate valves 20 at the first and second stages are actuated alternately for opening and closing after vacuum evacuation.
REFERENCES:
patent: 3294670 (1966-12-01), Charschan et al.
patent: 4693803 (1987-09-01), Casey et al.
patent: 5088908 (1992-02-01), Ezaki et al.
Amano Tadaomi
Kita Katsuyuki
Namiki Shigeru
Okuda Akira
Shibasaki Hatsuhiko
Matsushita Electric - Industrial Co., Ltd.
McDonald Rodney G.
Nguyen Nam
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