Continuous thin diamond film and method for making same

Stock material or miscellaneous articles – Self-sustaining carbon mass or layer with impregnant or...

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

428212, 428336, B32B 900

Patent

active

054320038

ABSTRACT:
A continuous thin diamond film having a thickness of less than about 2 microns has a permeability to helium lower than about 1.times.10.sup.-6 standard cubic centimeters of helium per second per square millimeter of surface area. The thin diamond film may be supported on a supporting grid and may be incorporated into an x-ray window. The thin diamond film of the present invention may be formed in a two-stage growth process wherein a first stage a carbonaceous gas at a first concentration is introduced in to the reactor and in a second stage the concentration of the carbonaceous gas is reduced to a second lower concentration.

REFERENCES:
patent: 4434188 (1984-02-01), Kamo et al.
patent: 4698256 (1987-10-01), Giglia et al.
patent: 4767517 (1988-08-01), Hiraki et al.
patent: 4777090 (1988-10-01), Ovshinsky et al.
patent: 4783368 (1988-11-01), Yamamoto et al.
patent: 5009923 (1991-04-01), Ogata et al.
Matsumoto et al. "Growth of Diamond Particles from Methane Hydrogen Gas" Jour. of Mat Scien 17 (1982) 51063112.
Matsumoto et al. "Chemical Vapor Deposition of Diamond from Methane-Hydrogen Gas" Pro 7th ICVM, 1987, pp. 386-391.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Continuous thin diamond film and method for making same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Continuous thin diamond film and method for making same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Continuous thin diamond film and method for making same will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-502284

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.