Continuous system for depositing amorphous semiconductor materia

Details Continuous system for depositing amorphous semiconductor materia Continuous system for depositing amorphous semiconductor materia

1981-03-16

1985-09-24

Morgenstern, Norman

Coating apparatus

Gas or vapor deposition

Running length work

118723, 118719, 118733, 118 501, 118666, 118721, C23C 1310

Patent

active

045427119

ABSTRACT:
A continuous system for depositing at least one layer of amorphous semiconductor material upon a substrate. Feed and takeup sections provide reel-to-reel advancement of a thin film substrate through the system. At least one chamber is located between the feed and takeup sections. A plasma is generated therein by glow discharge decomposition of an appropriate mixture of reaction gases. Apparatus associated with the chamber allows the close regulation of the plasma/substrate surface equilibrium to assure the deposition of a uniform layer of amorphous material. At least one servocontrolled reel drive regulates the tension of the web-like substrate as it advances to avoid cracking and to assure its proper registration with a mask comprising a plurality of strips. A curtain of inert gas provides isolation between the interior of each chamber and the environment.

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