Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor
Reexamination Certificate
2011-02-15
2011-02-15
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Junction field effect transistor
C257S390000, C257S903000, C257SE21209, C365S129000, C365S163000
Reexamination Certificate
active
07888711
ABSTRACT:
A structure for a memory device including a plurality of substantially planar thin-film layers or a plurality of conformal thin-film layers is disclosed. The thin-film layers form a memory element that is electrically in series with first and second cladded conductors and operative to store data as a plurality of conductivity profiles. A select voltage applied across the first and second cladded conductors is operative to perform data operations on the memory device. The memory device may optionally include a non-ohmic device electrically in series with the memory element and the first and second cladded conductors. Fabrication of the memory device does not require the plurality of thin-film layers be etched in order to form the memory element. The memory element can include a CMO layer having a selectively crystallized polycrystalline portion and an amorphous portion. The cladded conductors can include a core material made from copper.
REFERENCES:
patent: 2010/0157658 (2010-06-01), Schloss et al.
Bornstein Jonathan
Cheung Robin
Hansen David
Oh Travis Byonghyop
Rinerson Darrell
Pert Evan
Unity Semiconductor Corporation
Wilson Scott
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