Continuous multigate transistors

Details Continuous multigate transistors Continuous multigate transistors

2008-02-28

2009-12-22

Hoang, Quoc D (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

C257S365000, C257SE29264

Reexamination Certificate

active

07635881

ABSTRACT:
An N doped area neighboring to a P doped area on a semiconductor material, function respectively as a first gate and a second gate for transistors. A dielectric layer is made under the gates. A source and a drain are made under and near two sides of the dielectric layer, electrically coupled to the gate to form continuous multigate transistors.

REFERENCES:
patent: 6747328 (2004-06-01), Wu
patent: 2008/0128767 (2008-06-01), Adkisson et al.

Affiliated with

Also associated with

Rating

Continuous multigate transistors does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Continuous multigate transistors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Continuous multigate transistors will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4069339