Continuous method for depositing a film by modulated...

Coating processes – Direct application of electrical – magnetic – wave – or... – Chemical vapor deposition

Reexamination Certificate

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C427S561000, C427S252000, C427S255290, C427S314000, C427S573000, C427S576000, C427S582000

Reexamination Certificate

active

10137855

ABSTRACT:
The present invention relates to an enhanced sequential atomic layer deposition (ALD) technique suitable for deposition of barrier layers, adhesion layers, seed layers, low dielectric constant (low-k) films, high dielectric constant (high-k) films, and other conductive, semi-conductive, and non-conductive films. This is accomplished by 1) providing a non-thermal or non-pyrolytic means of triggering the deposition reaction; 2) providing a means of depositing a purer film of higher density at lower temperatures; and, 3) providing a faster and more efficient means of modulating the deposition sequence and hence the overall process rate resulting in an improved deposition method.

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