Coating processes – Direct application of electrical – magnetic – wave – or... – Chemical vapor deposition
Reexamination Certificate
2008-03-25
2008-03-25
Meeks, Timothy (Department: 1792)
Coating processes
Direct application of electrical, magnetic, wave, or...
Chemical vapor deposition
C427S561000, C427S252000, C427S255290, C427S314000, C427S573000, C427S576000, C427S582000
Reexamination Certificate
active
10137855
ABSTRACT:
The present invention relates to an enhanced sequential atomic layer deposition (ALD) technique suitable for deposition of barrier layers, adhesion layers, seed layers, low dielectric constant (low-k) films, high dielectric constant (high-k) films, and other conductive, semi-conductive, and non-conductive films. This is accomplished by 1) providing a non-thermal or non-pyrolytic means of triggering the deposition reaction; 2) providing a means of depositing a purer film of higher density at lower temperatures; and, 3) providing a faster and more efficient means of modulating the deposition sequence and hence the overall process rate resulting in an improved deposition method.
REFERENCES:
patent: 4401054 (1983-08-01), Matsuo et al.
patent: 4534842 (1985-08-01), Arnal et al.
patent: 4563367 (1986-01-01), Sherman
patent: 4745337 (1988-05-01), Pichot et al.
patent: 5061838 (1991-10-01), Lane et al.
patent: 5102687 (1992-04-01), Pelletier et al.
patent: 5223457 (1993-06-01), Mintz et al.
patent: 5227695 (1993-07-01), Pelletier et al.
patent: 5478403 (1995-12-01), Shinagawa et al.
patent: 5483919 (1996-01-01), Yokoyama et al.
patent: 5536914 (1996-07-01), Pelletier et al.
patent: 5605637 (1997-02-01), Shan et al.
patent: 5653811 (1997-08-01), Chan
patent: 5666023 (1997-09-01), Pelletier
patent: 5702530 (1997-12-01), Shan et al.
patent: 5762714 (1998-06-01), Mohn et al.
patent: 5916365 (1999-06-01), Sherman
patent: 6054016 (2000-04-01), Tuda et al.
patent: 6080446 (2000-06-01), Tobe et al.
patent: 6103304 (2000-08-01), Mizuno
patent: 6200893 (2001-03-01), Sneh
patent: 6416822 (2002-07-01), Chiang et al.
T.P. Chiang, et al., “Ion-induced chemical vapor deposition of high purity Cu films at room temperature using a microwave discharge H atom beam source,” Journal Vacuum Science Technology, Sep./Oct. 1997, p. 2677-2686, vol. A 15(5), American Vacuum Society.
T.P. Chiang, et al., “Surface kinetic study of ion-induced chemical vapor deposition of copper for focused ion beam applications,” Journal Vacuum Science Technology, Nov./Dec. 1997, p. 3104-3114, vol. A 15(6), American Vacuum Society.
K.A. Ashtiani, et al., “A New Hollow-Cathode Magnetron Source for 0.10um Copper Applications,” Novellus Systems, Inc., San Jose, CA, no date avail.
Xiaomeng Chen, et al., “Low temperature plasma-promoted chemical vapor deposition of tantalum from pentabromide for copper metalization,” Journal Vacuum Science Technology, Sep./Oct. 1999, p. 2887-2890, vol. B 16(5), American Vacuum Society.
Xiaomeng Chen, et al., “Low temperature plasma-assisted chemical vapor deposition of tantalum nitride from tantalum pentabromide for copper metalization,” Journal Vacuum Science Technology, Jan./Feb. 1999, p. 182-185, vol. B 17(1), American Vacuum Society.
Per Martensson, “Atomic Layer Epitaxy of Copper,” Comprehensive Summaries of Uppsala Dissertations from the Faculty of Science and Technology, 1999, p. 1-45, Acta Universitis Upsaliensis, Uppsala, Sweden, no month avail.
Per Martensson, et al., “Atomic Layer Epitaxy of Copper on Tantalum,” Chemical Vapor Deposition, 1997, p. 45-50, vol. 3 No. 1, Weinheim, no month avail.
Mikko Ritala, et al., “Controlled Growth of Tan, Ta3N5, and TaOxNy Thin Films by Atomic Layer Deposition,” Chemical Materials, 1999, p. 1712-1718, vol. 11 No. 7 American Chemical Society, no month avail.
Chiang Tony P.
Leeser Karl F.
Meeks Timothy
Novellus Systems Inc.
Ogonowsky Brian D.
Patent Law Group LLP
Stouffer Kelly M
LandOfFree
Continuous method for depositing a film by modulated... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Continuous method for depositing a film by modulated..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Continuous method for depositing a film by modulated... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3931243