Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having moving solid-liquid-solid region
Patent
1999-05-03
2000-07-18
Hiteshew, Felisa
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having moving solid-liquid-solid region
117 27, 117 87, 117211, 117212, 117922, C30B 1300
Patent
active
060901993
ABSTRACT:
The invention features a method of continuous crystalline growth. A granular source material is introduced into a hopper. A volume of the granular source material exiting the hopper is disposed on a translationally moving belt. The volume of the granular source material forms an angle of repose with the moving belt. The granular source material disposed on the moving belt is continuously fed into a crucible comprising a melt of the granular source material at a rate based on the angle of repose, the speed of the belt, and the size of the opening of the hopper. A crystalline ribbon is continuously grown by solidifying the melt.
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Martz Jennifer
Sachs Emanuel M.
Wallace, Jr. Richard L.
Evergreen Solar Inc.
Hiteshew Felisa
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