Continuous liquid silicon recharging process in czochralski cruc

Details Continuous liquid silicon recharging process in czochralski cruc Continuous liquid silicon recharging process in czochralski cruc

1993-06-07

1994-06-28

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Apparatus

For crystallization from liquid or supercritical state

117214, 117932, B01D 900

Patent

active

053244885

ABSTRACT:
In the Czochralski crucible pulling of crystal ingots, in particular those of silicon and having particularly large crystal diameters, the degree of filling of the crucible is kept approximately constant during the pulling process by continuously adding solid or liquid recharging material. According to the invention, the known disadvantages of thermal disturbances and the introduction of impurities and particles are overcome by a recharging system with a gas-tight seal, comprising additional crucible, stock container for semiconductor material and dopant having the appropriate feedlines and an exhaust gas line. In addition, the process makes possible a regulatable and separate recharging of dopant via the additional crucible.

REFERENCES:
patent: 3206286 (1965-09-01), Bennett, Jr. et al.
patent: 3370927 (1968-02-01), Faust, Jr.
patent: 4410494 (1983-10-01), Fiegl
patent: 4454096 (1984-06-01), Lorenzini et al.
patent: 5037503 (1991-08-01), Kajimoto et al.
Fiegl, "Recent Advances and Future Directions on CZ-Silicon Crystal Growth echnology," Solid State Technology, Aug. 1983, pp. 121-131.
Zulehner and Huber, "Czochralski-Grown Silicon," Crystals 8, Springer Verlag, Berlin-Heidelberg, 1982.

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