Continuous gas plasma etching apparatus

Adhesive bonding and miscellaneous chemical manufacture – Differential fluid etching apparatus – With microwave gas energizing means

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Details

156643, 156646, 219121P, H01L 21306, C23F 100

Patent

active

041510348

ABSTRACT:
A continuous gas plasma etching apparatus comprising a reaction chamber having an inlet means and an outlet means, an activation portion disposed at a distance from said reaction chamber, a distributor means for uniformly supplying said reaction chamber with an activated gas produced in said activation proton, an exhaust means for exhausting the gas inside said reaction chamber from a plurality of gas outlets, a conveyer means disposed inside said reaction chamber to transfer workpieces from the inlet means side to the outlet means side in said reaction chamber, a feeding chamber disposed on the inlet means side of said reaction chamber to contain the workpieces, a workpiece feeding means for feeding the workpieces in said feeding chamber from said inlet means to said conveyer means, a first shutter means for opening and shutting said inlet means, a receiving chamber disposed on the outlet means side of said reaction chamber to receive the workpieces treated with said activated gas in said reaction chamber, a treated workpiece delivering means for introducing the treated workpieces in said reaction chamber into said receiving chamber through said outlet means, and a second shutter means for opening and shutting said outlet means.

REFERENCES:
patent: 3410776 (1968-11-01), Bersin
patent: 3654108 (1972-04-01), Smith
patent: 3879597 (1975-04-01), Bersin et al.
patent: 4065369 (1977-12-01), Ogawa et al.
Region of Chemistry 25, 713 (1971) by Keiichiro Hozumi, pp. 206-214.
Plasma Chemistry in Electrical Discharge by McTaggart et al., Amsterdam (1969) pp. 60, 69.
I. I. Industries Incorporated (USA) Automatic Photoresist Developer Model, CD-1,2,3,4D.
J. Appl. Polym. Sci. 13E, 807 (1969) J. R. Hollahan et al., p. 809.

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