Continuous free layer spin valve sensor with patterned...

Dynamic magnetic information storage or retrieval – Head – Magnetoresistive reproducing head

Reexamination Certificate

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Reexamination Certificate

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06943995

ABSTRACT:
To form a spin valve device, start by forming a gap layer. Form a buffer layer with a layer of refractory material on the buffer layer. Form patterned underlayers including a magnetic material for providing trackwidth and longitudinal bias on the buffer layer comprising either a lower antiferromagnetic layer stacked with a ferromagnetic layer or a Cr layer stacked with a permanent magnetic layer. Form an inwardly tapered depression in the patterned underlayers down to the buffer layer by either ion milling through a mask or a stencil lift off technique. Form layers covering the patterned underlayers that cover the inwardly tapered depression. Form free, pinned, spacer and antiferromagnetic layers. Form conductors either on a surface of the antiferromagnetic layer aside from the depression or between the buffer layer and the patterned underlayers.

REFERENCES:
patent: 5608593 (1997-03-01), Kim et al.
patent: 5708358 (1998-01-01), Ravipati
patent: 5796561 (1998-08-01), Mauri
patent: 5828527 (1998-10-01), Takada et al.
patent: 6111722 (2000-08-01), Fukuzawa et al.
patent: 6493197 (2002-12-01), Ito et al.

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