Continuous forming method for functional deposited films and dep

Details Continuous forming method for functional deposited films and dep Continuous forming method for functional deposited films and dep

1996-11-20

1999-10-19

Nguyen, Nam

Coating apparatus

Gas or vapor deposition

Running length work

118719, 118723MP, 118723MW, 118723E, 20429824, 20429825, C23C 1654, C23C 1456

Patent

active

059682744

ABSTRACT:
The present invention aims to provide a continuous forming method and apparatus for functional deposited films having excellent characteristics while preventing any mutual mixture of gases between film forming chambers having different pressures, wherein semiconductor layers of desired conductivity type are deposited on a strip-like substrate within a plurality of film forming chambers, by plasma CVD, while the strip-like substrate is moved continuously in a longitudinal direction thereof through the plurality of film forming chambers connected via gas gates having means for introducing a scavenging gas into a slit-like separation passage, characterized in that at least one of the gas gates connecting the i-type layer film forming chamber for forming the semiconductor junction and the n- or p-type layer film forming chamber having higher pressure than the i-type layer film forming chamber has the scavenging gas introducing position disposed on the n- or p-type layer film forming chamber side off from the center of the separation chamber of the gas gate.

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