Continuous film-forming process using microwave energy in a movi

Details Continuous film-forming process using microwave energy in a movi Continuous film-forming process using microwave energy in a movi

1992-09-11

1996-04-23

Utech, Benjamin L.

Coating processes

Direct application of electrical, magnetic, wave, or...

Polymerization of coating utilizing direct application of...

427575, 427 58, 4272481, C23C 1600

Patent

active

055101518

ABSTRACT:
A microwave plasma CVD method for continuously forming a large area and length functional deposited film, the method comprises: continuously moving a substrate web in the longitudinal direction by paying out it by a pay-out mechanism and taking it up by a take-up mechanism; establishing a substantially enclosed film-forming chamber by curving and projecting the moving substrate web to form a columnar portion to be the circumferential wall of the film-forming chamber as the substrate is moving from the pay-out mechanism toward the take-up mechanism; introducing a film-forming raw material gas through a gas feeder into the film-forming chamber; and simultaneously, radiating a microwave energy in the film-forming chamber by using a microwave applicator, which is so designed that it can radiate a microwave energy in the direction parallel to the microwave propagating direction, to generate plasma in the film-forming chamber, thereby continuously forming a deposited film on the inner wall face of the continuously moving circumferential wall exposed to the plasma.

REFERENCES:
patent: 3814983 (1974-06-01), Weissfloch et al.
patent: 4400409 (1983-08-01), Izu et al.
patent: 4504518 (1985-03-01), Ovshinsky et al.
patent: 4517223 (1985-05-01), Ovshinsky et al.
patent: 4521717 (1985-06-01), Kieser
patent: 4723507 (1988-02-01), Ovshinsky et al.
patent: 4729341 (1988-03-01), Fournier et al.
patent: 4740385 (1988-04-01), Feuerstein et al.
patent: 4897284 (1990-01-01), Arai et al.
patent: 4930442 (1990-06-01), Iida et al.
patent: 4995341 (1991-02-01), Matsuyama
"The performance of a microwave ion source immersed in a multicusp static magnetic field," M. Dahimene et al., J. Vac. Sci, Technol. B4(1), Jan./Feb. 1986, pp. 126-130.
"Low temperature oxidation of silicon using a microwave plasma disk source," T. Roppel et al., J. Vac. Sci. Technol. B4(1), Jan./Feb. 1986, pp. 295-298.

Affiliated with

Also associated with

Rating

Continuous film-forming process using microwave energy in a movi does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Continuous film-forming process using microwave energy in a movi, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Continuous film-forming process using microwave energy in a movi will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2306850