Continuous dry etching system

Chemistry: electrical and wave energy – Apparatus – Coating – forming or etching by sputtering

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Details

156345, C23C 1456, C23F 102

Patent

active

048896098

ABSTRACT:
A system and method for dry etching an etchable material from a substrate, are disclosed. The system includes an etching chamber including means for establishing a dry etching process therein, a substrate chamber for storing the substrate, and transport means for advancing the substrate from the substrate chamber to the etching chamber. First coupling means couple the interior of the substrate chamber to the interior of the etching chamber to provide an opened passageway therebetween during the etching process. The transport means preferably continuously advances the substrate from the substrate chamber to the etching chamber. Also disclosed are means for maintaining unidirectional gas flow from the substrate chamber to the etching chamber to isolate the etching process from the substrate chamber.

REFERENCES:
patent: 4587002 (1986-05-01), Bok
patent: 4816638 (1989-03-01), Ukai et al.

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