Chemistry: electrical and wave energy – Apparatus – Coating – forming or etching by sputtering
Patent
1988-09-06
1989-12-26
Weisstuch, Aaron
Chemistry: electrical and wave energy
Apparatus
Coating, forming or etching by sputtering
156345, C23C 1456, C23F 102
Patent
active
048896098
ABSTRACT:
A system and method for dry etching an etchable material from a substrate, are disclosed. The system includes an etching chamber including means for establishing a dry etching process therein, a substrate chamber for storing the substrate, and transport means for advancing the substrate from the substrate chamber to the etching chamber. First coupling means couple the interior of the substrate chamber to the interior of the etching chamber to provide an opened passageway therebetween during the etching process. The transport means preferably continuously advances the substrate from the substrate chamber to the etching chamber. Also disclosed are means for maintaining unidirectional gas flow from the substrate chamber to the etching chamber to isolate the etching process from the substrate chamber.
REFERENCES:
patent: 4587002 (1986-05-01), Bok
patent: 4816638 (1989-03-01), Ukai et al.
Goldman Richard M.
Massaroni Kenneth M.
Ovonic Imaging Systems, Inc.
Siskind Marvin S.
Weisstuch Aaron
LandOfFree
Continuous dry etching system does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Continuous dry etching system, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Continuous dry etching system will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1575885