Continuous crystal plate growth process and apparatus

Details Continuous crystal plate growth process and apparatus Continuous crystal plate growth process and apparatus

2000-02-16

2000-11-28

Hiteshew, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Apparatus

117219, 117220, 117222, 117223, 117922, C30B 2964, C30B 3500

Patent

active

061530115

ABSTRACT:
Reactive gas is released through a crystal source material or melt to react with impurities and carry the impurities away as gaseous products or as precipitates or in light or heavy form. The gaseous products are removed by vacuum and the heavy products fall to the bottom of the melt. Light products rise to the top of the melt. After purifying, dopants are added to the melt. The melt moves away from the heater and the crystal is formed. Subsequent heating zones re-melt and refine the crystal, and a dopant is added in a final heating zone. The crystal is divided, and divided portions of the crystal are re-heated for heat treating and annealing.

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