Continuous crystal plate growth process and apparatus

Details Continuous crystal plate growth process and apparatus Continuous crystal plate growth process and apparatus

1995-06-16

1999-11-30

Utech, Benjamin

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

117 34, 117 47, 117914, C30B 1506

Patent

active

059935405

ABSTRACT:
Reactive gas is released through a crystal source material or melt to react with impurities and carry the impurities away as gaseous products or as precipitates or in light or heavy form. The gaseous products are removed by vacuum and the heavy products fall to the bottom of the melt. Light products rise to the top of the melt. After purifying, dopants are added to the melt. The melt moves away from the heater and the crystal is formed. Subsequent heating zones re-melt and refine the crystal, and a dopant is added in a final heating zone. The crystal is divided, and divided portions of the crystal are re-heated for heat treating and annealing.

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