Content addressable semiconductor memory device and operating me

Static information storage and retrieval – Associative memories – Ferroelectric cell

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36518901, 36523001, G11C 1300

Patent

active

051269686

ABSTRACT:
A semiconductor memory device comprises a plurality or CAM cells. In a refreshing operation, data of "1" is applied to all of bit lines and inversion bit lines. In the CAM cells storing the data "1", writing of the data "1" onto the bit lines and the inversion bit lines is performed. Then, the data of "0" is applied to all of the bit lines and the inversion bit lines. In the CAM cells storing the data "0", writing of the data "0" onto the bit lines and the inversion bit lines is performed. In a partial writing operation, in the CAM cells to which writing is performed, a first control node is activated, thereby making it possible to write the CAM cells. In the rest of the CAM cells, the first control node is inactivated, thereby making it impossible to write the CAM cells.

REFERENCES:
patent: 3701980 (1972-10-01), Mundy
"Content-Addressable Memories" by T. Kohonen, pp. 143 and 257.
"Low-Cost Associative Memory" by Joseph L. Mundy et al, Journal of Solid State Circuits, vol. SC-7, No. 5, pp. 364-368, Oct. 1972.

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