Content addressable memory having field masking

Details Content addressable memory having field masking Content addressable memory having field masking

1986-01-02

1988-02-02

Popek, Joseph A.

Static information storage and retrieval

Associative memories

Ferroelectric cell

365154, G11C 1500

Patent

active

047232242

ABSTRACT:
A content addressable memory (CAM) comprising a plurality of CAM cells, each including a static read/write memory (RWM) cell and an EXCLUSIVE OR (XOR) gate which couples a sense line to a ground line only if the logic state of the operand bit stored in the RWM cell does not match the logic state of an operand bit presented to the CAM cell. By arranging a selected subset of the CAM cells so that the XOR gates thereof act upon a first portion of either the sense line or the ground line while the balance of the CAM cells are arranged so that the XOR gates thereof act upon a second portion of that same line, a single coupler interposed between the first and second portions can be selectively disabled by a mask signal to simultaneously mask all of the bits stored in the subset of CAM cells during the matching operation of the CAM. If appropriate, the mask signal may comprise the bit stored in a particular one of the CAM cells.

REFERENCES:
J. C. Hou, "CAM Cell for Use in Hybrid Memory Scheme", IBM Technical Disclosure Bulletin, vol. 26, No. 8, Jan. 1984, pp. 4331-4334.

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