Content addressable memory for high speed retrieval operation wi

Details Content addressable memory for high speed retrieval operation wi Content addressable memory for high speed retrieval operation wi

1992-11-30

1994-09-06

LaRoche, Eugene R.

Static information storage and retrieval

Associative memories

Ferroelectric cell

36518907, G11C 1300

Patent

active

053454111

ABSTRACT:
A semiconductor integrated circuit capable of retrieving data from a number of memory cells without mutual interference at high speed and making it possible to build a large capacity data base at higher speed is provided with a set of retrieval memory word blocks including a first and a second memory unit respectively for defining the electrical connection or otherwise nonconnection between a first or second data line and a source electrode line and a control word line for controlling these memory units, a match line having a first potential setting means for setting a first potential beforehand, a sense amplifier for detecting the potential of the match line, and a second potential fixing means for fixing the potential of the match line to a second potential with the source electrode line as a control input. The second potential fixing means is made active or inactive by means of the control word line to control the potential of the match line by making or breaking the connection between the first and second data lines and the common source electrode line in accordance with the definition of the connections of the first and second memory units.

REFERENCES:
patent: 5050125 (1991-09-01), Momodomi
patent: 5130947 (1992-07-01), Reed
Carlstedt et al., "A Content Addressable Memory Cell with MNOS Transistors", IEEE Journal of Solid-State Circuits, vol. 8, No. 5, Oct., 1973, pp. 338-343.

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