Content addressable memory device

Details Content addressable memory device Content addressable memory device

2007-02-06

2007-02-06

Zarabian, Amir (Department: 2827)

Static information storage and retrieval

Associative memories

Ferroelectric cell

C711S108000, C365S230030

Reexamination Certificate

active

11072246

ABSTRACT:
In accordance with the regions which are component elements of memory information (entry) and input information (comparison information or search key), quaternary information including a pair of the minimum value and the difference or ternary information including a pair of the data and the mask are used as I/O signals. In addition, in accordance with the two types of information, two types of encoding circuits and decoding circuits are disposed, and either one of the encoding circuits and the decoding circuits are activated in accordance with the values set to the registers disposed to designate the format of information in each region of the entry and the search key. By selecting the desired register from the plurality of registers in response to the external command signals and address signals, the encoding and decoding in accordance with the information to be processed are carried out.

REFERENCES:
patent: 4755974 (1988-07-01), Yamada et al.
patent: 6288922 (2001-09-01), Wong et al.
T. Miwa et al., “A 1-Mb 2-Tr/b Nonvolatile CAM Based on Flash Memory Technologies,” IEEE Journal of Solid-State Circuits, vol. 31, No. 11, Nov. 1996, pp. 1601-1609.

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