Content addressable memory circuit with improved memory cell...

Details Content addressable memory circuit with improved memory cell... Content addressable memory circuit with improved memory cell...

2007-06-19

2007-06-19

Hoang, Huan (Department: 2827)

Static information storage and retrieval

Associative memories

Ferroelectric cell

C365S189070, C365S154000

Reexamination Certificate

active

11048224

ABSTRACT:
A Content Addressable Memory (CAM) circuit includes memory cells preferably formed as two memory cells each having internal nodes. A compare circuit is operative with the memory cells. A common terminal (VPL) exists for the memory cells. Capacitors are added between the internal nodes of each of the memory cells and common terminal for memory cell stability.

REFERENCES:
patent: 6262907 (2001-07-01), Lien et al.
patent: 6678184 (2004-01-01), Lysinger et al.
patent: 6751110 (2004-06-01), Hu
patent: 6842359 (2005-01-01), Hata et al.

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