Static information storage and retrieval – Associative memories – Ferroelectric cell
Reexamination Certificate
2006-10-31
2006-10-31
Phan, Trong (Department: 2827)
Static information storage and retrieval
Associative memories
Ferroelectric cell
C365S158000
Reexamination Certificate
active
07130206
ABSTRACT:
A content addressable memory cell is described. In one embodiment, the content addressable memory cell includes first and second resistive memory elements being coupled in a first series connection and being connected between a first potential value and a second potential value being smaller than said first potential value, and means for their switching between states exhibiting different electric resistance values. The memory cell includes a first field effect transistor and a second field effect transistor, said first and second transistors having drain-source-paths and gate electrodes, said drain-source-paths of said first and second transistors being connected in a second series connection and being connected to at least one of first current lines. The first current line is connected to a potential value level detector for sensing a potential difference as to said third potential value.
REFERENCES:
patent: 6269016 (2001-07-01), Moyer
patent: 6304477 (2001-10-01), Naji
patent: 6515897 (2003-02-01), Monsma et al.
patent: 6819585 (2004-11-01), Fujita et al.
patent: 6944050 (2005-09-01), Kang et al.
Altis Semiconductor
Dicke Billig & Czaja, PLLC
Phan Trong
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