Static information storage and retrieval – Associative memories
Reexamination Certificate
2007-05-01
2010-06-01
Nguyen, Dang T (Department: 2824)
Static information storage and retrieval
Associative memories
C365S049170, C365S174000
Reexamination Certificate
active
07729149
ABSTRACT:
A semiconductor device that includes a memory cell having a junction field effect transistor (JFET) used to form a content addressable memory (CAM) cell is disclosed. The JFET may include a data storage region disposed between a first and second insulating region. The data storage region provides a first threshold voltage to the JFET when storing a first data value and provides a second threshold voltage to the JFET when storing a second data value. The memory cell is a dynamic random access memory (DRAM) cell and can be used to form a CAM cell. The CAM cell may be a ternary CAM cell formed with as few as two JFETs.
REFERENCES:
patent: 3964083 (1976-06-01), Lohstroh
patent: 6166938 (2000-12-01), Wong
patent: 6262907 (2001-07-01), Lien et al.
patent: 6307223 (2001-10-01), Yu
patent: 7115933 (2006-10-01), Menut et al.
patent: 7196921 (2007-03-01), Sarin et al.
patent: 7633784 (2009-12-01), Thummalapally
patent: 2007/0096144 (2007-05-01), Kapoor
patent: 2008/0001183 (2008-01-01), Kapoor
patent: 2008/0265936 (2008-10-01), Vora
patent: 2008/0273409 (2008-11-01), Thummalapally
patent: 2008/0285322 (2008-11-01), Thummalapally
Bedair, Wissenam, and Cooper, “Atomic Layer Epitaxy of Advanced Devices and Circuits,” Final Report submitted to Office of Naval Research N00014-88-K-0527P3. Nov. 1991. pp. 1-63.
Oldham et al., A One-Transistor Memory Cell with Nondestructive Readout, IEEE International Solid-State Circuits Conference, Feb. 14, 1973, pp. 34-35, and 195.
Heald et al., Multilevel Random-Access Memory Using One Transistor Per Cell, IEEE Journal of Solid-State Circuits, Aug. 1976, pp. 519-528 vol. SC11, No. 4.
PCT International Search Report and Written Opinion of the International Searching Authority for International Application No. PCT/US2008/061946, dated Aug. 5, 2008.
Nguyen Dang T
Sofocleous Alexander
SuVolta, Inc.
Walker Darryl G.
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