Content addressable memory cell

Details Content addressable memory cell Content addressable memory cell

2005-05-03

2005-05-03

Le, Thong Q. (Department: 2818)

Static information storage and retrieval

Associative memories

Ferroelectric cell

C365S168000

Reexamination Certificate

active

06888730

ABSTRACT:
A content addressable memory (CAM) having a plurality of ternary memory cells, each ternary half cell comprising an equal number of transistors of a p-type and an n-type, the p-type transistors being formed in a first well region and the n-type transistors being formed in a second well region, the wells having at most one p+ to n+ region spacing, the transistors being interconnected to form the half ternary CAM cell and wherein the interconnections for the cell is restricted to a silicon layer and a first metal layer and connections between said cell and external signal lines is restricted to at least a second metal layer.

REFERENCES:
patent: 5699288 (1997-12-01), Singh et al.
patent: 6108227 (2000-08-01), Voelkel
patent: 6154384 (2000-11-01), Nataraj et al.
patent: 6188594 (2001-02-01), Ong
patent: 6195278 (2001-02-01), Calin et al.
patent: 6219271 (2001-04-01), Ishida
patent: 6240004 (2001-05-01), Kuo et al.
patent: 6263400 (2001-07-01), Rangasayee et al.
patent: 6320777 (2001-11-01), Lines et al.
patent: 6333254 (2001-12-01), Abbott et al.
patent: 6339241 (2002-01-01), Mandelman et al.
patent: 6362993 (2002-03-01), Henderson et al.
patent: 6370052 (2002-04-01), Hsu et al.
patent: 1 187 142 (2002-03-01), None
patent: 2000223591 (2000-08-01), None

Affiliated with

Also associated with

Rating

Content addressable memory cell does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Content addressable memory cell, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Content addressable memory cell will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3398223