Content addressable memory (CAM) cell bit line architecture

Details Content addressable memory (CAM) cell bit line architecture Content addressable memory (CAM) cell bit line architecture

2007-12-11

2007-12-11

Pham, L ý´ Duy (Department: 2827)

Static information storage and retrieval

Associative memories

Ferroelectric cell

C365S154000, C365S189050, C365S189070, C711S108000, C711S117000, C711S118000, C711S128000

Reexamination Certificate

active

11647696

ABSTRACT:
A ternary content addressable memory (TCAM) cell (100) can include two memory elements (102-0and102-1) with a single bit line (106-0and106-1) per memory element. A TCAM cell (100) can also include a compare stack (104) and two word lines (114and116) that can connect to each memory element (102-0and102-1). The memory elements (102-0and102-1) can include SRAM type memory cells with one of two data terminals connected to a pre-write potential (Vpre, which can be a ground potential, or the like). Write operations can include pre-setting the data values of memory elements (102-0and102-1) to the pre-write potential prior to providing write data via the bit lines (106-0and106-1).

REFERENCES:
patent: 2003/0086315 (2003-05-01), Mizuno et al.
patent: 2003/0090924 (2003-05-01), Nii

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