Content addressable memory and self-blocking driver

Static information storage and retrieval – Associative memories – Ferroelectric cell

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Details

364900, 307358, G06F 100, G11C 1500, H03K 5153

Patent

active

048581801

ABSTRACT:
An improved content addressable memory cell which employs a structure which utilizes a single transistor to discharge the hit line, and is driven by a self-blocking driver which glitchlessly changes state without the use of virtual nodes. Also disclosed is an alternative content addressable memory cell which can be written into in two distinct fashions, one of which permits the content of the cell to be changed without requiring the entire data word with which the cell is associated to be rewritten.

REFERENCES:
patent: 4009472 (1977-02-01), Jones
patent: 4532606 (1985-07-01), Phelps
patent: 4622653 (1980-11-01), McElroy
patent: 4670858 (1987-06-01), Almy

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