Contamination free source for shallow low energy junction implan

Details Contamination free source for shallow low energy junction implan Contamination free source for shallow low energy junction implan

1998-05-05

1999-10-12

Fahmy, Wael M.

Active solid-state devices (e.g., transistors, solid-state diode

With specified dopant

257770, H01L 21265

Patent

active

059659327

ABSTRACT:
A method for forming a P-type region in a semiconducting crystalline substrate by ion implantation is disclosed, wherein the implant species is an ionic molecule that contains titanium and boron.

REFERENCES:
patent: 5086016 (1992-02-01), Brodsky et al.
patent: 5170242 (1992-12-01), Stevens et al.
patent: 5306408 (1994-04-01), Treglio
patent: 5330921 (1994-07-01), Yoshida et al.
patent: 5700716 (1997-12-01), Sharan et al.
patent: 5745990 (1998-05-01), Lee et al.
Choi et al., "Stability of TiB2 as a Diffusion Barrier on Silicon", J. Electrochem. Soc. vol. 138, No, Oct. '91.

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