Contaminant diffusion barrier for a ceramic oxide superconductor

Details Contaminant diffusion barrier for a ceramic oxide superconductor Contaminant diffusion barrier for a ceramic oxide superconductor

1992-08-17

1994-02-08

King, Roy

Superconductor technology: apparatus, material, process

High temperature , per se

Having tc greater than or equal to 150 k

505733, 505730, 427 62, 4273761, 4273762, 4274193, B05D 302, B05D 512

Patent

active

052848256

ABSTRACT:
A superconducting structure is provided comprising a substrate, a superconductor coating supported by the substrate and a diffusion barrier positioned between the superconductor coating and the substrate to inhibit diffusion of contaminants from the substrate to the superconductor coating. The coating is a ceramic oxide having superconducting properties. The diffusion barrier may likewise be a ceramic oxide, but differs in its specific composition to provide it with a peritectic decomposition temperature greater than the superconductor coating. Accordingly, the diffusion barrier exhibits substantially lower atomic mobility than the superconductor coating during manufacture of the superconducting structure, thereby preventing contamination of the coating by the substrate.

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Gai, P. L., et al. "Synthesis, Microstructure and Local Chemistry of Superconducting BiSrCaCuO Thin Films." Mat. Res. Soc. Symp. Proc. vol. 138, 1989, pp. 143-149.
Simon, R. W. et al. "Low-Loss Substrate for Epitaxial Growth of High-Temperature Superconductor Thin Films", Applied Physics Letters. American Institute of Physics. vol. 53, No. 26, Dec. 26, 1988, pp. 2677-2679.

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