Contacts to rod shaped Schottky gate fets

Details Contacts to rod shaped Schottky gate fets Contacts to rod shaped Schottky gate fets

1992-02-06

1994-02-08

Larkins, William D.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

257 45, 257287, H01L 29812

Patent

active

052850900

ABSTRACT:
Electrical ohmic contacts are made to a matrix of silicon having conductive rods embedded therein without making contact to any of the rods. Those rods which extend to the surface in the selected area of the matrix to be contacted are etched to form holes. The holes are filled with insulating polycrystalline silicon. The region of the selected area is heavily doped, and an ohmic contact member is made thereto. The underlying rods are spaced from the ohmic contact member and the heavily-doped region by intervening polycrystalline silicon.

REFERENCES:
patent: 3767982 (1973-10-01), Teszner et al.
patent: 3925803 (1975-12-01), Kobayashi
patent: 4463366 (1984-07-01), Ishii et al.
patent: 4482907 (1984-11-01), Jay
patent: 4660063 (1987-04-01), Anthony
patent: 4724223 (1988-02-01), Ditchek
patent: 4800417 (1989-01-01), Kato
patent: 4829173 (1989-05-01), Ditchek
patent: 4845051 (1989-07-01), Cogan et al.
patent: 4977436 (1990-12-01), Tsuchiya et al.

Affiliated with

Also associated with

Rating

Contacts to rod shaped Schottky gate fets does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Contacts to rod shaped Schottky gate fets, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Contacts to rod shaped Schottky gate fets will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-700075