Contacts for VLSI devices using direct-reacted silicide

Details Contacts for VLSI devices using direct-reacted silicide Contacts for VLSI devices using direct-reacted silicide

1984-10-11

1986-05-20

Hearn, Brian E.

Metal working

Method of mechanical manufacture

Electrical device making

29589, 29590, 148DIG19, 148DIG20, 148DIG147, 357 67, 357 71, 357 68, H01L 2124

Patent

active

045891966

ABSTRACT:
Metal contacts and interconnections for semiconductor integrated circuits are formed by a process using direct-reacted silicide to increase step or sidewall coverage. First a thin layer of titanium or other refractory metal is deposited, extending into a contact hole, then polysilicon is deposited and a preferential etch removes all of the polysilicon except on the vertical sides of steps or apertures. A second thin layer of titanium is deposited, then a heat treatment forms silicide to create conductive sidewalls or a plug. Metal contacts then engage the direct-reacted silicide rather than relying upon step coverage.

REFERENCES:
patent: 3567509 (1971-03-01), Kuiper
patent: 4324038 (1982-04-01), Chang et al.
patent: 4414737 (1983-11-01), Menjo et al.
patent: 4507853 (1985-04-01), McDavid
Ku, "Ohmic Contacts for Small, Shallow Structure Device", IBM Tech. Discl. Bull., vol. 22, No. 4, 9/79.
Gates et al, "Encapsulation for Semiconductor Device", IBM Tech. Discl. Bull., vol. 8, No. 11, 4/66.

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