Contactless uniform-tunneling separate p-well (cusp)...

Details Contactless uniform-tunneling separate p-well (cusp)... Contactless uniform-tunneling separate p-well (cusp)...

2006-01-10

2006-01-10

Picardat, Kevin M. (Department: 2822)

Semiconductor device manufacturing: process

Making device array and selectively interconnecting

Rendering selected devices operable or inoperable

C438S005000, C438S010000, C438S017000, C438S466000, C365S145000

Reexamination Certificate

active

06984547

ABSTRACT:
Floating-gate field-effect transistors or memory cells formed in isolated wells are useful in the fabrication of non-volatile memory arrays and devices. A column of such floating-gate memory cells are associated with a well containing the source/drain regions for each memory cell in the column. These wells are isolated from source/drain regions of other columns of the array. Fowler-Nordheim tunneling can be used to program and erase such floating-gate memory cells either on an individual basis or on a bulk or block basis.

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