Contactless technique for measuring epitaxial dopant concentrati

Details Contactless technique for measuring epitaxial dopant concentrati Contactless technique for measuring epitaxial dopant concentrati

1991-10-08

1993-06-01

Karlsen, Ernest F.

Electricity: measuring and testing

Measuring, testing, or sensing electricity, per se

With rotor

2504922, 324158R, G01R 3126, G01R 3128

Patent

active

052163628

ABSTRACT:
The dopant concentration of a semiconductor wafer is determined using a contactless technique. First, a temporary P-N junction is formed in the surface of the semiconductor wafer using corona discharge. Then, the area of the junction is measured, and the depletion region is deepened, again by corona discharge. The depletion region is collapsed using light, and as the depletion region collapses, the surface potential is measured as a function of time. The charge which drains as the depletion layer collapses is directly proportional to the change in time. Since the total charge is known from the original corona discharge used to establish the depletion layer, as are the unit area and the surface voltage, the dopant profile is directly calculatable as a function of the surface voltage and the charge per unit area.

REFERENCES:
patent: 3995216 (1976-11-01), Yun
patent: 4812756 (1989-03-01), Curtis et al.

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