Contactless optical probe for use in semiconductor...

Electricity: measuring and testing – Fault detecting in electric circuits and of electric components – Of individual circuit component or element

Reexamination Certificate

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C324S754120

Reexamination Certificate

active

06856159

ABSTRACT:
A method and/or device (285) for determining first and second band offsets (100, 110) at a semiconductor/dielectric heterointerface (115), which includes the semiconductor/dielectric heterointerface (115) exposed to incident photons (205) from a light source (200); a detector (275, 280) for generating a signal by detecting emitted photons (260, 265) from the semiconductor/dielectric heterointerface (115); and an element (310) for changing the energy of incident photons (205) to monitor the first and second band offsets (100, 110).

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Wang, W., et al, “Wavelength Selective Alteration of the Si(001)/SiO2Interface by Intense Tunable Infrared Radiation” APS Mtg. Mar. 18, 1998 in L.A published on Web.
Wang, W., et al, “Coupled Electron-Hole Dynamics at the Si/SiO2Interface” Physical Review Letters, vol. 81, No. 19, Nov. 9, 1998.
International Search Report PCT/US00/06879 dated May 16, 2000.

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