Contactless LSI junction leakage testing method

Details Contactless LSI junction leakage testing method Contactless LSI junction leakage testing method

1975-12-31

1977-03-29

Smith, Alfred E.

Electricity: measuring and testing

Measuring, testing, or sensing electricity, per se

With rotor

324 40, 250211J, H01J 3912, G01R 3100

Patent

active

040152030

ABSTRACT:
An inductively coupled oscillator method for inducing eddy currents in a semiconductor PN junction wafer while irradiating said wafer with pulsed light of selected intensity. The oscillator loading due to the pulsed light modulated eddy current losses is monitored and displayed on an oscilloscope in the form of a decay time plot of voltage amplitude, the plot being a function of the pulsed light intensity and the recombination rate of light-induced electrons and holes on each side of the junctions. The leakage characteristics of the junctions which are desired to be measured are one of the factors determining said rate. Leakage characteristic is made the predominant factor by setting the intensity of the pulsed light to a value which produces a nearly straight line decay time plot on the oscilloscope display. The slope of the line then is a measure of the leakage characteristic.

REFERENCES:
patent: 2859407 (1958-11-01), Henisch
patent: 3745454 (1973-07-01), Nikirk et al.
patent: 3798539 (1974-03-01), Brooks et al.
patent: 3829881 (1974-08-01), Kohashi
"Simple Contactless Method For Measuring Decay Time of Photoconductivity In Silicon" Lichtenstein et al., Review of Scientific Instruments, vol. 38, 1/67, p. 133.
"Measurement of Carrier Lifetimes" Stevenson and Keyes Journal of Applied Physics, vol. 26, No. 2, Feb. 55, pp. 190- 194.

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