Contactless electrical thin oxide measurements

Details Contactless electrical thin oxide measurements Contactless electrical thin oxide measurements

1995-05-12

1996-01-16

Wieder, Kenneth A.

Electricity: measuring and testing

A material property using electrostatic phenomenon

Corona induced

324 711, 324716, 324765, G01R 3126, G01N 2760

Patent

active

054850916

ABSTRACT:
A method for measuring the thickness of very thin oxide layers on a silicon substrate. A corona discharge source repetitively deposits a calibrated fixed charge density on the surface of the oxide. The resultant change in oxide surface potential for each charge deposition is measured. By choosing a starting value for an assumed oxide thickness, the approximate change in silicon bandbending per corona discharge step is determined. The cumulative changes in bandbending versus oxide surface potential yields an experimental bandbending versus bias characteristic. A theoretical bandbending versus bias characteristic is established. The experimental and theoretical characteristics are matched at predetermined points thereof and then the assumed oxide thickness is iterated until both characteristics superimpose in the silicon accumulation region. The iterated oxide thickness that allows both characteristics to superimpose is the oxide thickness value being sought. The finally evolved experimental characteristic also is used to determine the interface states density of the oxide. Specially designed corona discharge guns are described for use with the oxide thickness and interface states density measurement techniques.

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M. S. Fung, et al, "Contactless Photovoltage vs Bias Method for Determining Flat-Band Voltage" IBM Technical Disclosure Bulletin, V. 32, No. 9A, pp. 14-17, Feb. 1990.
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