Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Patent
1996-08-13
1998-03-31
Meier, Stephen
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
H01L 3106
Patent
active
057341915
ABSTRACT:
A contactless capacitor coupled bipolar phototransistor having an integrated electronic shutter for reducing the overflow and blooming problems associated with the imaging of strong images. Overflow control and an anti-blooming mechanism are obtained by use of a second emitter (the "shutter") which is used to remove excess image generated charge. This prevents the base-emitter junction potential from becoming forward biased during image integration when the phototransistor is exposed to a strong image. The shutter is biased slightly lower than the first emitter of the phototransistor so that the base-shutter junction is forward biased sooner than the base-emitter junction when the imaging element is exposed to a strong image. The overflow current of the generated holes is then drained to the shutter, rather than into the emitter where it would produce noise on the column sense line.
REFERENCES:
patent: 5289023 (1994-02-01), Mead
Bergemont Albert
Chi Min-hwa
Mead Carver
Meier Stephen
National Semiconductor Corporation
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