Contacting structure on a semiconductor arrangement

Details Contacting structure on a semiconductor arrangement Contacting structure on a semiconductor arrangement

1979-03-14

1980-06-03

Edlow, Martin H.

Oscillators

Relaxation oscillators

357;67, 331 945H, 148175, 29589, H01L 3300

Patent

active

042064686

ABSTRACT:
A semiconductor laser with a substrate made of gallium arsenide and layers, epitaxially grown upon the substrate. The upper layer is covered partially by a rib of gallium arsenide and carries one electrical current.

REFERENCES:
patent: 4011113 (1977-03-01), Thompson

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