Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With housing or contact structure
Reexamination Certificate
2006-08-22
2006-08-22
Jackson, Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With housing or contact structure
C257S774000
Reexamination Certificate
active
07095061
ABSTRACT:
A light emitting device includes a layer of first conductivity type, a layer of second conductivity type, and a light emitting layer disposed between the layer of first conductivity type and the layer of second conductivity type. A via is formed in the layer of second conductivity type, down to the layer of first conductivity type. The vias may be formed by, for example, etching, ion implantation, diffusion, or selective growth of at least one layer of second conductivity type. A first contact electrically contacts the layer of first conductivity type through the via. A second contact electrically contacts the layer of second conductivity type. A ring that surrounds the light emitting layer and is electrically connected to the first contact electrically contacts the layer of first conductivity type.
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Abstract of Japanese Patent No. 2002280618, 1 page.
Bhat Jérôme C.
Ludowise Michael J.
Steigerwald Daniel A.
Jackson Jerome
Leiterman Rachel V.
Patent Law Group LLP
Philips Lumileds Lighting Company LLC
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