Contact via for semiconductor device

Details Contact via for semiconductor device Contact via for semiconductor device

1993-03-11

1994-05-31

Larkins, William D.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

257775, 257773, H01L 2348, H01L 2940

Patent

active

053171934

ABSTRACT:
The etching selectivity is controlled by appropriately changing the dimension of the opening of each contact holes in forming simultaneously a plurality of contact holes of different depth by etching. By forming a dent in advance underlying the region where a contact hole is to be formed, the depth of the contact hole can be increased, whereby difference in the depths of the plurality of contact holes can be reduced. As a result, damage in the underlying layer or under etching in forming a plurality of contact holes of different depth simultaneously by etching can be solved.

REFERENCES:
patent: 4640738 (1987-02-01), Fredericks et al.
patent: 4872050 (1989-10-01), Okamoto et al.
patent: 5063175 (1991-11-01), Broadbent
Nojiri et al, "Microwave Plasma Etching of Silicon Dioxide for Half-Micron ULSIs", Amended Abstract of the 21st Conference on Solid State Devices and Materials (1989), pp. 153-156.
Kato et al, "Measurement of Ion Scattering Observed by Etching Feature in Reactive Ion Etching", 1989 Dry Process Symposium, pp. 33-38.

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